Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /
Variability is one of the most challenging obstacles for IC design in the nanometer regime.� In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...
Main Authors: | Abu-Rahma, Mohamed H. (Author), Anis, Mohab. (Author) |
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Corporate Author: | SpringerLink (Online service) |
Format: | Electronic |
Language: | English |
Published: |
New York, NY :
Springer New York : Imprint: Springer,
2013.
|
Subjects: | |
Online Access: | https://ezaccess.library.uitm.edu.my/login?url=http://dx.doi.org/10.1007/978-1-4614-1749-1 |
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