Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /

• Main Authors: Abu-Rahma, Mohamed H. (Author), Anis, Mohab. (Author)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic
• Language: English
• Published: New York, NY : Springer New York : Imprint: Springer, 2013.
• Subjects: Engineering.; Computer aided design.; Systems engineering.; Circuits and Systems.; Computer-Aided Engineering (CAD, CAE) and Design.
• Online Access: https://ezaccess.library.uitm.edu.my/login?url=http://dx.doi.org/10.1007/978-1-4614-1749-1

Variability is one of the most challenging obstacles for IC design in the nanometer regime.� In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...

Table of Contents:

• Introduction
• Variability in Nanometer Technologies and Impact on SRAM
• Variarion-Tolerant SRAM Write and Read Assist Techniques
• Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control
• A Methodology for Statistical Estimation of Read Access Yield in SRAMs
• Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction.