Hf-based high-k dielectrics process development, performance characterization, and reliability /
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found th...
| Main Author: | |
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| Other Authors: | |
| Format: | Electronic |
| Language: | English |
| Published: |
San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) :
Morgan & Claypool Publishers,
c2005.
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| Edition: | 1st ed. |
| Series: | Synthesis lectures on solid state materials and devices (Online),
#1. |
| Subjects: | |
| Online Access: | Abstract with links to resource |
Table of Contents:
- Introduction
- Front end device technology evolutions
- Beyond 45nm technology
- Issues in high-k dielectrics
- Hard- and soft-breakdown characteristics of ultrathin HfO2 under dynamic and constant voltage stress
- Motivation for high-k gate dielectrics
- Reliability issues of high-k dielectrics
- Breakdown behaviors of HfO2 under dc stressing
- Dynamic reliability of HfO2
- Impact of high temperature forming gas and D2 anneal on reliability of HfO2 gate dielectrics
- Previous results
- Effect of D2 anneal on various surface preparations
- Effect of high temperature forming gas in terms of reliability
- Effect of barrier height and the nature of bilayer structure of HfO2 with dual metal gate technology
- Motivation
- Experimental procedure
- Results and discussion
- Bimodal defect generation rate by low barrier height and its impact on reliability characteristics
- Motivation
- Experimental procedure
- Results and discussion.