Hf-based high-k dielectrics process development, performance characterization, and reliability /
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found th...
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| Other Authors: | |
| Format: | Electronic |
| Language: | English |
| Published: |
San Rafael, Calif. (1537 Fourth Street, San Rafael, CA 94901 USA) :
Morgan & Claypool Publishers,
c2005.
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| Edition: | 1st ed. |
| Series: | Synthesis lectures on solid state materials and devices (Online),
#1. |
| Subjects: | |
| Online Access: | Abstract with links to resource |