Fundamentals of III-V Semiconductor MOSFETs

• Corporate Author: SpringerLink (Online service)
• Other Authors: Oktyabrsky, Serge. (Editor), Ye, Peide. (Editor)
• Format: Electronic
• Language: English
• Published: Boston, MA : Springer US : Imprint: Springer, 2010.
• Subjects: Engineering.; Systems engineering.; Optical materials.; Circuits and Systems.; Solid State Physics.; Spectroscopy and Microscopy.; Optical and Electronic Materials.
• Online Access: https://ezaccess.library.uitm.edu.my/login?url=http://dx.doi.org/10.1007/978-1-4419-1547-4

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a r...

Table of Contents:

• Towards III-V digital MOSFET circuits
• Physics of compound semiconductors: band-engineered heterostructures and strain effects
• Physics and modeling of compound semiconductor MOSFETs
• P-channel MOSFETs
• Compound semiconductor technology: MBE and MOCVD
• Properties and trade-offs of compound semiconductor MOSFETs
• Electronic structure and properties of high-k gate oxides
• Interface chemistry of III-V's with oxides
• Heterostructure FETs for digital circuits
• Interface passivation techniques
• Source/drain contact technologies
• MOSFETs with Ga2O3 gate oxide
• MOSFETs with ALD high-k oxides
• Narrow bandgap MOSFETs: InAs and InSb as channel materials
• GaN based MOSFETs
• Electrical measurement issues for gate stacks and FETs
• Circuits with III-V MOSFETs.