Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming
The commercial development of novel semiconductor devices requires that their properties be examined as thoroughly and rapidly as possible. These properties are investigated by obtaining numerical solutions of the highly nonlinear coupled set of equations which govern their behaviour. In particular,...
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| Format: | Electronic |
| Language: | English |
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London :
Springer London,
2009.
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| Online Access: | https://ezaccess.library.uitm.edu.my/login?url=http://dx.doi.org/10.1007/978-1-84882-937-4 |
Table of Contents:
- Part I Overview and physical equations
- 1 Overview of device modeling
- 2 Quantum mechanics
- 3 Equilibrium thermodynamics and statistical mechanics
- 4 Density of states and applications <U+0013> 1
- 5 Density of states and applications <U+0013> 2
- 6 The transport equations and the device equations
- Part II Mathematical and numerical methods
- 7 Basic approximation and numerical methods
- 8 Fermi and associated integrals
- 9 The upwinding method
- 10 Solution of equations: the Newton and reduced method
- 11 Solution of equations: the phaseplane method
- 12 Solution of equations: the multigrid method
- 13 Approximate and numerical solutions of the Schr·odinger equation
- 14 Genetic algorithms and simulated annealing
- 15 Grid generation
- A The theory of contractive mapping.