Charged Semiconductor Defects Structure, Thermodynamics and Diffusion /

• Main Authors: Seebauer, Edmund G. (Author), Kratzer, Meredith C. (Author)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic
• Language: English
• Published: London : Springer London, 2009.
• Series: Engineering Materials and Processes,
• Subjects: Physics.; Particles (Nuclear physics).; Materials.; Electronics.; Optical materials.; Solid State Physics and Spectroscopy.; Optical and Electronic Materials.; Continuum Mechanics and Mechanics of Materials.; Electronics and Microelectronics, Instrumentation.; Engineering Thermodynamics, Transport Phenomena.
• Online Access: https://ezaccess.library.uitm.edu.my/login?url=http://dx.doi.org/10.1007/978-1-84882-059-3

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect...

Table of Contents:

• Introduction
• Fundamentals of Defect Ionization and Transport
• Experimental and Computational Characterization
• Trends in Charged Defect Behavior
• Intrinsic Defects: Structure
• Intrinsic Defects: Ionization Thermodynamics
• Intrinsic Defects: Diffusion
• Extrinsic Defects.