GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...
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| Format: | Electronic |
| Language: | English |
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Cham :
Springer International Publishing : Imprint: Springer,
2013.
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| Series: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Online Access: | View fulltext via EzAccess |