Mosfet Modeling & BSIM3 UserỚ"s Guide

• Main Authors: Cheng, Yuhua. (Author), Hu, Chenming. (Author)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic
• Language: English
• Published: Boston, MA : Springer US, 2002.
• Subjects: Engineering.; Electrical engineering.; Electronic circuits.; Circuits and Systems.; Electrical Engineering.
• Online Access: View fulltext via EzAccess

Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a...

Table of Contents:

• Significant Physical Effects In Modern MOSFETs
• Threshold Voltage Model
• IỚ<U+001c>V Model
• Capacitance Model
• Substrate Current Model
• Noise Model
• Source/Drain Parasitics Model
• Temperature Dependence Model
• Non-quasi Static (NQS) Model
• BSIM3v3 Model Implementation
• Model Testing
• Model Parameter Extraction
• RF and Other Compact Model Applications.