Technology of Gallium Nitride Crystal Growth

• Corporate Author: SpringerLink (Online service)
• Other Authors: Ehrentraut, Dirk. (Editor), Meissner, Elke. (Editor), Bockowski, Michal. (Editor)
• Format: Electronic
• Language: English
• Published: Berlin, Heidelberg : Springer Berlin Heidelberg, 2010.
• Series: Springer Series in Materials Science, 133
• Subjects: Physics.; Crystallography.; Optical materials.; Optical and Electronic Materials.
• Online Access: https://ezaccess.library.uitm.edu.my/login?url=http://dx.doi.org/10.1007/978-3-642-04830-2

This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-th...

Table of Contents:

• Preface
• Development of the Gallium Nitride Market
• HVPE of GaN
• Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds
• HVPE at Hitachi Cable
• HVPE Technology
• High-Growth Rate MOCVD
• Ammonothermal Solution Growth
• High-Pressure Solution (HPS) Growth of Gallium Nitride
• Na Flux LPE
• Ga Flux LPE
• Optical Properties of GaN Substrates
• Structural Properties of GaN.